^zmi-conauctoi l/^ioaucti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUZ11 n - channel 50v - 0.03q - 33a to-220 stripfet? mosfet type BUZ11 vdss 50 v rds(on) < 0.04 ii id 33 a typical ros(on) = 0.03 q avalanche rugged technology 100% avalanche tested high current capability 175c operating temperature applications . high current, high speed switching . solenoid and relay drivers . regulators . dc-dc & dc-ac converters . motor control, audio amplifiers . automotive environment (injection, abs, air-bag, lampdrivers, etc.) to-220 internal schematic diagram absolute maximum ratings symbol vds vdgr vgs id idm plot tstg t parameter drain-source voltage (vgs = 0) drain- gate voltage (rgs = 20 kq) gate-source voltage drain current (continuous) at tc = 25 c drain current (pulsed) total dissipation at tc = 25 c storage temperature max. operating junction temperature din humidity category (din 40040) iec climatic category (din iec 68-1) value 50 50 20 33 134 90 -65 to 175 175 e 55/150/56 unit v v v a a w c c first digit of the datecode being z or k identifies silicon characterized in this datasheet. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUZ11 thermal data rthj-case rthj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.67 62.5 c/w c/w avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 5 < 1%) single pulse avalanche energy (starting t, = 25 c, id = iar, vdd = 25 v) value 33 200 unit a mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions !d=250na vgs=0 vds - max rating vds = max rating tj=l25c vgs = 20 v min. 50 typ. max. 1 10 100 unit v ua ma na on (*) symbol vos(th) ros(orl) parameter gate threshold voltage static drain-source on resistance test conditions vds= vgs id= 1 ma vgs = 10v id = 19 a min. 2.1 typ. 3 0.03 max. 4 0.04 unit v il dynamic symbol 9fs (*) c,ss cosh crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds = 15 v id = 19 a vds= 25 v f = 1 mhz vgs = 0 min. 10 typ. 17 2100 260 65 max. unit s pf pf pf switching symbol td(on) tr td(off) tf parameter turn-on time rise time turn-off delay time fall time test conditions vdd = 30 v id = 18 a rgs = 50 q. vgs = 10 v min. typ. 40 200 220 110 max. unit ns ns ns ns
BUZ11 electrical characteristics (continued) source drain diode symbol iso 'sdm vsd (*) trr qrr parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge test conditions isd = 60 a vgs = 0 lso=36a di/dt = 100 a/us vdd = 30 v t, = 150 c win. typ. 75 0.24 max. 33 134 1.8 unit a a v ns nc *) pulsed: pulse duration = 300 us, duty cycle 1.5 % safe operating area thermal impedance ?o 2 4 b 8 10 ' 10 vos(v) 10~s 10" 10 10
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